Electrode contact structure for semiconductor device

ABSTRACT

In one embodiment, a method for forming a semiconductor device having a shield electrode includes forming first and second shield electrode contact portions within a contact trench. The first shield electrode contact portion can be formed recessed within the contact trench and includes a flat portion. The second shield electrode contact portion can be formed within the contact trench and makes contact to the first shield electrode contact portion along the flat portion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of prior U.S. patentapplication Ser. No. 13/471,105, filed on May 14, 2012, which is herebyincorporated by reference, and priority thereto is hereby claimed.

BACKGROUND OF THE INVENTION

This document relates generally to semiconductor devices, and morespecifically to methods of forming insulated gate devices andstructures.

Metal oxide field effect semiconductor transistor (MOSFET) devices havebeen used in many power switching applications, such as dc-dcconverters. In a typical MOSFET, a gate electrode provides turn-on andturn-off control with the application of an appropriate gate voltage. Byway of example, in an n-type enhancement mode MOSFET, turn-on occurswhen a conductive n-type inversion layer (i.e., channel region) isformed in a p-type body region in response to the application of apositive gate voltage, which exceeds an inherent threshold voltage. Theinversion layer connects n-type source regions to n-type drain regions,and allows for majority carrier conduction between these regions.

There is a class of MOSFET devices in which the gate electrode is formedin a trench that extends downward from a major surface of asemiconductor material, such as silicon. Current flow in this class ofdevices is primarily in a vertical direction through the device, and, asa result, device cells can be more densely packed. All else being equal,the more densely packed device cells can increase the current carryingcapability and can reduce on-resistance of the device.

Achieving reduced specific on-resistance (ohm-area) performance is oneimportant goal for MOSFET device designers. A reduced specificon-resistance can determine product cost and gross margins orprofitability for a MOSFET design. For example, a low specificon-resistance allows for a smaller MOSFET die or chip, which in turnleads to lower costs in semiconductor materials and package structures.However, challenges continue to exist in manufacturing higher densityMOSFET devices that achieve the desired performance including reducedspecific on-resistance. Such challenges include providing reliable diesize or pitch reductions, reducing manufacturing costs, simplifyingprocess steps, and improving yields.

Accordingly, it is desirable to have a method and structure that reducescell size, reduces manufacturing costs, simplifies processing steps,improve yields, or combinations thereof. Additionally, it is beneficialfor the method and structure to maintain or improve electricalperformance compared to related structures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-9 illustrate partial cross-sectional views of a semiconductordevice at various stages of fabrication in accordance with a firstembodiment of the present invention;

FIG. 10 illustrates a partial cross-sectional view of a semiconductordevice in accordance with a second embodiment of the present inventionat an intermediate step in fabrication; and

FIGS. 11-17 illustrate partial cross-sectional views of thesemiconductor device of FIGS. 1-9 at further stages of fabrication inaccordance with the first embodiment.

For simplicity and clarity of illustration, elements in the figures arenot necessarily drawn to scale, and the same reference numbers indifferent figures denote generally the same elements. Additionally,descriptions and details of well-known steps and elements may be omittedfor simplicity of the description. As used herein current-carryingelectrode means an element of a device that carries current through thedevice, such as a source or a drain of an MOS transistor, an emitter ora collector of a bipolar transistor, or a cathode or anode of a diode,and a control electrode means an element of the device that controlscurrent through the device, such as a gate of a MOS transistor or a baseof a bipolar transistor. Although the devices are explained herein ascertain N-channel devices, a person of ordinary skill in the artunderstands that P-channel devices and complementary devices are alsopossible in accordance with the present description. For clarity of thedrawings, doped regions of device structures are illustrated as havinggenerally straight-line edges and precise angular corners; however,those skilled in the art understand that due to the diffusion andactivation of dopants, the edges of doped regions are generally notstraight lines and the corners are not precise angles.

Furthermore, the term “major surface” when used in conjunction with asemiconductor region or substrate means the surface of the semiconductorregion or substrate that forms an interface with another material, suchas a dielectric, an insulator, a conductor, or a polycrystallinesemiconductor. The major surface can have a topography that changes inthe x, y and z directions.

In addition, structures of the present description can embody either acellular base design (in which the body regions are a plurality ofdistinct and separate cellular or stripe regions) or a single basedesign (in which the body region is a single region formed in anelongated pattern, typically in a serpentine pattern or a centralportion with connected appendages). However, one embodiment of thepresent description will be described as a cellular base designthroughout the description for ease of understanding. It should beunderstood that the present disclosure encompasses both a cellular basedesign and a single base design.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a partial cross-sectional view of a semiconductordevice 10 or cell 10 at an early stage of fabrication in accordance witha first embodiment. Device 10 includes a region of semiconductormaterial, semiconductor substrate, or semiconductor region 11, which canbe, for example, an n-type silicon substrate 12 having a resistivityranging from about 0.001 ohm-cm to about 0.005 ohm-cm. By way ofexample, substrate 12 can be doped with phosphorous, arsenic, orantimony. In the embodiment illustrated, substrate 12 provides a drainregion, drain contact, or a first current carrying contact for device10. In this embodiment, device 10 can include an active area 102 and acontact area 103 where contact can be made, for example, to shieldelectrode structures described hereinafter. Also, in this embodiment,device 10 can be configured as a vertical power MOSFET structure, butthis description applies as well to insulated gate bipolar transistors(IGBT), MOS-gated thyristors, and other related or equivalent structuresas known by one of ordinary skill in the relevant art.

A semiconductor layer, drift region, or extended drain region 14 can beformed in, on, or overlying substrate 12. In one embodiment,semiconductor layer 14 can be formed using semiconductor epitaxialgrowth techniques. Alternatively, semiconductor layer 14 can be formedusing semiconductor doping and diffusion techniques. In an embodimentsuitable for a 50 volt device, semiconductor layer 14 can be n-type witha dopant concentration of about 1.0×10¹⁶ atoms/cm³ to about 1.0×10¹⁷atoms/cm³ and can have a thickness from about 3 microns to about 5microns. The dopant concentration and thickness of semiconductor layer14 can be increased or decreased depending on the desireddrain-to-source breakdown voltage (BV_(DSS)) rating of device 10. In oneembodiment, semiconductor layer 14 can have a graded dopant profile. Inan alternate embodiment, the conductivity type of substrate 12 can beopposite to the conductivity type of semiconductor layer 14 to form, forexample, an IGBT embodiment.

A masking layer 47 can be formed overlying a major surface 18 of regionof semiconductor material 11. In one embodiment, region of semiconductormaterial 11 also includes major surface 19, which is opposite to majorsurface 18. In one embodiment, masking layer 47 can comprise adielectric film or a film resistant to the etch chemistries used to formtrenches described hereinafter. In one embodiment, masking layer 47 caninclude more than one layer including, for example, a dielectric layer471 of 0.030 microns of thermal oxide, a dielectric layer 472 of about0.2 microns of silicon nitride, and a dielectric layer 473 of about 0.1microns of deposited oxide. In accordance with one embodiment,dielectric layer 472 can be configured to protect major surface 18 fromencroachment effects in subsequent process steps that occur, forexample, after trench structures are formed. This encroachment effect isa problem with related devices when thermal oxides are formed alongupper surfaces of trench structures and in proximity to exposed portionsof semiconductor layer 14 along major surface 18. The encroachmentproblem can cause an uneven dielectric layer along major surface 18,which can impact the dopant profiles of subsequently formed dopedregions.

Openings 58 and 59 can then be formed in masking layer 47. In oneembodiment, photoresist and etch processes can be used to form openings58 and 59. In one embodiment, openings 58 can have a width 16 of about0.2 microns to about 0.25 microns, and opening 59 can have a width 17 ofabout 0.4 microns to about 0.5 microns. In one embodiment, an initialspacing 181 between openings 58 can be about 0.55 microns to about 0.65microns.

After openings 58 and 59 are formed, segments of semiconductor layer 14can be removed to form trenches 22 and 27 extending from major surface18. By way of example, trenches 22 and 27 can be etched using plasmaetching techniques with a fluorocarbon chemistry (for example, SF₆/O₂).In one embodiment, trenches 22 and 27 can extend partially intosemiconductor layer 14 leaving a portion of semiconductor layer betweenlower portions of trenches 22 and 27 and substrate 12. In oneembodiment, trenches 22 and 27 can extend through semiconductor layer 14and into substrate 12. In one embodiment, a sloped sidewall etch can beused with a slope of about 88 degrees to 89.5 degrees being one example.By way of example when using a SF₆/O₂ chemistry, the sloped sidewallscan be achieved by increasing the flow of O₂, which increases thesidewall Si—F—O passivant. When a sloped etch is used, trenches 22 canbe separated by a distance 182 of about 0.6 microns to about 0.70microns near the lower surfaces of trenches 22 as generally noted inFIG. 1. In one embodiment, trenches 22 and 27 can have a depth of about1.5 microns to about 2.5 microns. In accordance with the presentembodiment, trenches 22 can be configured as gate electrode and shieldelectrode trenches for the active devices of device 10 formed withinactive area 102, and trench 27 can be configured as a contact trenchwhere external contact can be made to the shield electrodes withincontact area 103. In one embodiment, contact area 103 can be located ina peripheral portion of device 10. In another embodiment, contact area103 can be located in a centralized portion of device 10. In a furtherembodiment, a plurality of contact areas 103 can be used. For example,one can be located in a peripheral portion of device 10, and another canbe located in a centralized portion of device 10.

FIG. 2 illustrates a partial cross-sectional view of device 10 afteradditional processing. In an optional step, a sacrificial layer (notshown) is formed adjoining surfaces of trenches 22 and 27. By way ofexample, a thermal silicon oxide layer can be formed. Subsequently, thesacrificial layer and dielectric layer 473 can be removed using, forexample, an etch process. A layer 261 of material can then be formedalong surfaces of trenches 22 and 27. In one embodiment, layer 261 canbe a dielectric or insulative material. By way of example, layer 261 canbe about a 0.03 micron wet or thermal oxide layer. Portions ofsemiconductor layer 14 can be consumed during the formation of thethermal oxide, which reduces spacing 181 approximately by the thicknessof the sacrificial layer (if used) and of layer 261 designated asreduced spacing or first reduction 1810. In one embodiment, firstreduction 1810 can be about 0.5 to about 0.6 microns.

FIG. 3 illustrates a partial cross-sectional view of device 10 afterfurther processing. A conformal layer 262 can be formed along layer 261and sidewall portions of dielectric layer 472, and overlying dielectriclayer 472. In one embodiment, conformal layer 262 can be a dielectric orinsulative material. In one embodiment, conformal layer 262 can be adeposited oxide. By way of example, conformal layer 262 can have athickness from about 0.05 microns to about 0.1 microns. In an alternateembodiment, conformal layer 262 can be formed by depositing apolysilicon layer and fully oxidizing it to convert it to a thermaloxide. In one embodiment, layers 261 and/or 262 are configured as ashield electrode dielectric layer or structure 259, which separate,insulate, or isolate the shield electrode (for example, element 21illustrated in FIG. 17) from semiconductor layer 14 and substrate 12 (iftrenches 22 adjoin substrate 12).

In one embodiment, a layer of material can be formed overlying majorsurface 18 and within trenches 22 and 27. In one embodiment, the layerof material can be a crystalline semiconductor material, a conductivematerial, or combinations thereof. In one embodiment, the layer ofmaterial can be doped polysilicon. In one embodiment, the polysiliconcan be doped with an n-type dopant, such as phosphorous or arsenic. In asubsequent step, the layer of material can be planarized to formintermediate structures 1021 and 1141 in trenches 22 and 27respectively. In one embodiment, chemical mechanical polishingtechniques can be used for the planarization step. When the layer ofmaterial includes crystalline semiconductor material, the layer ofmaterial can be heat treated before or after planarization to, forexample, active and/or diffuse any dopant material present in thecrystalline semiconductor material.

FIG. 4 illustrates a partial cross-sectional view of device 10 aftermore processing. For example, intermediate structures 1021 and 1141 canbe further recessed within trenches 22 and 27 to form shield electrodes21 and a shield electrode contact portion 141. As an example, a dry etchwith a fluorine or chlorine based chemistry can be used for the recessstep. In one embodiment, an etch step, such as a wet etch step can beused to remove conformal layer 262 overlying dielectric layer 472 andalong sidewall portions of dielectric layer 472. The wet etch step canbe used to further remove conformal layer 262 and layer 261 from uppersidewall portions or sidewall portions 221 of trenches 22, and fromupper sidewall portions or sidewall portions 271 of trench 27 asillustrated in FIG. 5. In one embodiment, a buffered hydrofluoric (HF)acid can be used. The etch step can also expose portions 210 of shieldelectrodes 21 and portions 1410 of shield electrode contact portion 141as illustrated, for example, in FIG. 5.

FIG. 6 illustrates a partial cross-sectional view of device 10 afteradditional processing. In one embodiment, a dielectric layer 266 can beformed along sidewall portions 221 and 271 and along exposed portions210 and 1410. In one embodiment, dielectric layer 266 can be a thinsacrificial or thermal oxide layer, or another dielectric or insulativelayer. In one embodiment, dielectric layer 266 can have a thickness ofabout 0.005 microns to about 0.01 microns. Subsequently, an etch stepcan be used to remove additional portions of shield electrodes 21 andshield electrode contact portion 141 as illustrated, for example, inFIG. 7. In one embodiment, portions of dielectric layer 266 that overlieshield electrodes 21 and shield electrode contact portion 141 can beremoved with an initial break-through etch or removal step. By way ofexample, a fluorine based chemistry can be used for the break-throughetch step, and a fluorine or chlorine based chemistry can be used forthe recess etch step.

FIG. 8 illustrates a partial cross-sectional view of device 10 afterfurther processing. In one embodiment, a removal step can be used toremove dielectric layer 266 and portions of layers 261 and 262.Subsequently, in accordance with the present embodiment, a dielectriclayer is formed along sidewall portions 221 and 227 of trenches 22 and27. In one embodiment, the dielectric layer can also be formed overlyingportions of layers 261 and 262, shield electrode 21, and/or shieldelectrode contact 141. In accordance with the present embodiment, thedielectric layer forms gate layers or gate dielectric layers 26 alongupper sidewall surfaces 221 of trenches 22. Gate layers 26 can beoxides, nitrides, tantalum pentoxide, titanium dioxide, barium strontiumtitanate, high k dielectric materials, combinations thereof, or otherrelated or equivalent materials as known by one of ordinary skill in theart. In one embodiment, gate layers 26 can be silicon oxide and can havea thickness from about 0.01 microns to about 0.06 microns. Portions ofsemiconductor layer 14 can be further consumed in the formation of gatelayers 26, which reduces spacing 181 approximately by the thickness ofgate layers 26. This reduction in spacing 181 is designated as reducedspacing or second reduction 1811. In one embodiment, second reduction1811 can be about 0.045 to about 0.055 microns.

With the presence of layers 261 and 262 along the lower sidewallportions of trenches 22, lower portions 260 of gate layers 26 intrenches 22 can be thinner than the upper portions of gate layers 26.This thinning effect is believed to be caused at least in part bystresses present in the various and different layers of material inproximity to where the thinning effect occurs. The gate dielectric layerthinning effect can lead to lower yields and/or impaired deviceperformance.

FIG. 9 illustrates a partial cross-sectional view of device 10 afteradditional processing. In a subsequent step, a layer of material isformed along gate layers 26 and overlying major surface 18. In oneembodiment, the layer of material can be a material that is differentthan gate layers 26. In one embodiment, the layer of material can be anoxidation-resistant material. The layer of material can then beanisotropically etched to form spacer layers 55 along sidewall portionsof gate layers 26 while leaving other portions of gate layers 26 exposedabove shield electrodes 21 and shield electrode contact portion 141. Inone embodiment, spacer layers 55 can be a nitride material, such as adeposited silicon nitride. In one embodiment, spacer layers 55 can havea thickness from about 0.015 microns to about 0.02 microns. In oneembodiment, lower portions of spacer layers 55 adjoin lower portions 260of gate layers 26 as illustrated, for example, in FIG. 9.

FIG. 10 illustrates a partial cross-sectional view of device 10 inaccordance with an alternative embodiment. In an alternative processingstep, a layer of crystalline semiconductor material can be formed alonggate layers 26 and overlying major surface 18 before the layer ofmaterial used to form spacer layers 55 is formed. The layer of materialused to form spacer layers 55 can then be formed along the layer ofcrystalline semiconductor material. Both layers can then beanisotropically etched to form spacer layers 55 and 56 as illustrated,for example, in FIG. 10. Alternatively, the layer of crystallinesemiconductor layer can be anisotropically etched before layers 55 areformed. In one embodiment, spacer layers 56 can comprise about 0.03microns of polysilicon, and can be doped or undoped. In anotherembodiment, spacer layers 56 can comprise 0.03 microns of amorphoussilicon, and can be doped or undoped.

FIG. 11 illustrates a partial cross-sectional view of device 10 based onthe FIG. 9 embodiment after additional processing. In accordance withthe present embodiment, layers 127 can be formed adjacent shieldelectrodes 21 and shield electrode contact portion 141. In oneembodiment, layers 127 can comprise a dielectric or insulative material,and are configured, for example, as interpoly dielectric layers orinter-electrode dielectric layers. In one embodiment, layers 127 cancomprise a silicon oxide formed using wet or thermal oxidationtechniques. In one embodiment, layers 127 can have a thickness fromabout 0.1 microns to about 0.3 microns. In accordance with the presentembodiment, spacers 55 (and optionally 56) are configured to provide alocalized oxidation effect that compensates for the thinning of gatelayers 26 along lower portions 260. In one embodiment, layers 127increase the thickness of the gate layers 26 in proximity to where gatelayers 26 and shield dielectric structure 259 meet or adjoin.

In related devices where the gate dielectric layers are formed after theinterpoly dielectric layer is formed, the gate thinning effect is notappropriately addressed, which can cause lower yields and/or impaireddevice performance. In the present embodiment, the dielectric layer usedto form gate layer 26 is formed before interpoly dielectric layer 127 isformed, and in accordance with the present embodiment, the impact of thegate layer thinning effect is reduced with the localized oxidationprocess thereby improving, for example, performance and yields.Additionally, the thinning effect can be addressed while the interpolydielectric is formed without added processing costs. Moreover, becausegate layers 26 are formed before the formation of layers 127 and notlater stripped and reformed as in related devices, the integrity of theinterface between semiconductor layer 14 and gate layers 26 can bemaintained, for example, by reducing exposure of the interface tocontamination and/or damage.

FIG. 12 illustrates a partial cross-sectional view of device 10 afterfurther processing. In subsequent steps, spacers 55 (and 56 if present)can be removed. In one embodiment, dielectric layer 472 can also beremoved. In an optional step, an oxidation process can be used toincrease or add to the thickness of gate layers 26. Subsequently, aconductive or crystalline semiconductor layer 281 can be formedoverlying major surface 18 and within trenches 22 and 27. In oneembodiment, layer 281 can comprise doped polysilicon. In one embodiment,the polysilicon can be doped with an n-type dopant, such as phosphorousor arsenic. Subsequently, a masking layer (not shown) can be formedoverlying major surface 18 and a removal step can be used to removeportions of layer 281 from within trench 27. The masking layer can thenbe removed.

In accordance with the present embodiment, a layer of material can beformed overlying major surface 18 and along upper portions or portionsof trench 27. In one embodiment, the layer of material can be adielectric or insulative material. In one embodiment, the layer ofmaterial can comprise a deposited oxide, and can have a thickness fromabout 0.08 microns to about 0.12 microns. The layer of material can thenbe anisotropically etched to form spacer layers 68 within trench 27. Theanisotropic etch step can also remove portions of layer 127 to form anopening 1270 in layer 127 in trench 27 to expose a portion of shieldcontact portion 141. In accordance with the present embodiment, shieldcontact portion 141 is configured to provide a flat or horizontalportion 1410 for making subsequent contact to another shield electrodeportion 142 (illustrated in FIG. 14). In one embodiment, flat portion1410 can be generally oriented parallel to major surface 19 of substrate12. In one embodiment, flat portion 1410 can be generally orientedperpendicular to sidewall portions 271 of trench 27. Flat portion 1410is further illustrated in FIG. 13, which is a 90 degree rotation ofcontact area 103 of device 10. In one embodiment, flat portion 1410terminates in a recessed configuration within trench 27 in contact area103. Flat portion 1410 is an improvement over related devices where theshield contact structure curves upwards to major surface 18 as single orcontinuous structure. In related devices, the formation of the curvedportion of the shield contact structure was found to cause yield issues.FIG. 13 further illustrates a gate electrode contact portion 282, whichcan also be formed in contact area 103 and is configured for providingexternal electrical connection to gate electrodes 28 within activeportion 102 of device 10. In one embodiment, gate electrode contactportion 282 can be formed as part of layer 281.

FIG. 14 illustrates a partial cross-sectional view of device 10 afterfurther processing. A layer of material can be formed overlying majorsurface 18 and within trench 27. In one embodiment, the layer ofmaterial can comprise crystalline semiconductor material, a conductivematerial, or combinations thereof. In one embodiment, the layer ofmaterial can comprise doped polysilicon. In one embodiment, thepolysilicon can be doped with an n-type dopant, such as phosphorous orarsenic. Subsequently, the layer of material can be planarized usingdielectric layer 471 as a stop layer. In one embodiment, chemicalmechanical planarization can be used for the planarization step. Theplanarization step can be used to form shield contact portion 142, whichin accordance with the present embodiment contacts shield contactportion 141 along flat portion 1410. In addition, the planarization stepcan form gate electrodes 28 within trenches 22 as illustrated, forexample, in FIG. 14.

Subsequently, a masking layer (not shown) can be formed overlyingcontact area 103, and body, base, or doped regions 31 can be formedextending from major surface 18 adjacent to trenches 22. Body regions 31can have a conductivity type that is opposite to the conductivity typeof semiconductor layer 14. In one embodiment, body regions 31 can havep-type conductivity, and can be formed using, for example, a borondopant source. Body regions 31 have a dopant concentration suitable forforming inversion layers that operate as conduction channels or channelregions 45 (illustrated, for example, in FIG. 17) of device 10. Bodyregions 31 can extend from major surface 18 to a depth, for example,from about 0.5 microns to about 2.0 microns. It is understood that bodyregions 31 can be formed at an earlier stage of fabrication, forexample, before trenches 22 are formed. Body regions 31 can be formedusing doping techniques, such as ion implantation and anneal techniques.

FIG. 15 illustrates a partial cross-sectional view of device 10 afteradditional processing. In a subsequent step, a masking layer 131 can beformed overlying portions of major surface 18. In one embodiment, sourceregions, current conducting regions, or current carrying regions 33 canbe formed within, in, or overlying body regions 31, and can extend frommajor surface 18 to a depth, for example, from about 0.1 microns toabout 0.5 microns. In one embodiment, source regions 33 can have n-typeconductivity, and can be formed using, for example, a phosphorous orarsenic dopant source. In one embodiment, an ion implant doping processcan be used to form source regions 33 within body regions 31. Maskinglayer 131 can then be removed, and the implanted dopant can be annealed.

Gate electrodes 28 and shield electrode contact portion 142 can berecessed below major surface 18 as illustrated in FIG. 16. In oneembodiment, about 0.15 microns to about 0.25 microns of material can beremoved as a result of the recessing step. In an optional step,enhancement or conductive regions 89 can be formed within upper surfacesof gate electrodes 28 and/or shield electrode contact portion 142. Inone embodiment, conductive regions 89 can be self-aligned silicidestructures. In one embodiment, conductive regions 89 can be a cobaltsilicide. A layer of material 477 can then formed overlying majorsurface 18, gate electrode 28, and shield electrode contact portion 142.In one embodiment, layer of material 477 can be a dielectric orinsulative material. In one embodiment, layer of material 477 can be anitride layer, such as a deposited silicon nitride layer, and can havethickness of about 0.05 microns.

In one embodiment, a layer or layers 41 can be formed overlying majorsurface 18. In one embodiment, layers 41 comprise dielectric orinsulative layers, and can be configured as an inter-layer dielectric(ILD) structure. In one embodiment, layers 41 can be silicon oxides,such as doped or undoped deposited silicon oxides. In one embodiment,layers 41 can include at least one layer of deposited silicon oxidedoped with phosphorous or boron and phosphorous, and at least one layerof undoped oxide. In one embodiment, layers 41 can have a thickness fromabout 0.4 microns to about 1.0 microns. In one embodiment, layers 41 canbe planarized to provide a more uniform surface topography, whichimproves manufacturability.

Subsequently, a masking layer (not shown) can be formed overlying device10, and openings, vias, or contact trenches 422 can be formed for makingcontact to source regions 33, body regions 31, and shield contactportion 142 as illustrated, for example, in FIG. 17. In one embodiment,the masking layer can be removed, and a recess etch can be used toremove portions of source regions 33 and portions of shield contactportion 142. The recess etch step can expose portions of body regions 31below source regions 33. A p-type body contact, enhancement region, orcontact region 36 can then be formed in body regions 31, which can beconfigured to provide a lower contact resistance to body regions 31. Ionimplantation (for example, using boron) and anneal techniques can beused to form contact regions 36.

Conductive regions 43 can then be formed in contact trenches 422 andconfigured to provide for electrical contact to source regions 33, bodyregions 31 through contact regions 36, and shield electrode contactportion 142. In one embodiment, conductive regions 43 can be conductiveplugs or plug structures. In one embodiment, conductive regions 43 caninclude a conductive barrier structure or liner and a conductive fillmaterial. In one embodiment, the barrier structure can include ametal/metal-nitride configuration, such as titanium/titanium-nitride orother related or equivalent materials as known by one of ordinary skillin the art. In another embodiment, the barrier structure can furtherinclude a metal-silicide structure. In one embodiment, the conductivefill material includes tungsten. In one embodiment, conductive regions43 can be planarized to provide a more uniform surface topography.

A conductive layer 44 can be formed overlying major surface 18, and aconductive layer 46 can be formed overlying major surface 19. Conductivelayers 44 and 46 typically are configured to provide electricalconnection between the individual device components of device 10 and anext level of assembly. In one embodiment, conductive layer 44 can betitanium/titanium-nitride/aluminum-copper or other related or equivalentmaterials as known by one of ordinary skill in the art, and isconfigured as a source electrode or terminal. In one embodiment,conductive layer 46 can be a solderable metal structure, such astitanium-nickel-silver, chromium-nickel-gold, or other related orequivalent materials as known by one of ordinary skill in the art, andis configured as a drain electrode or terminal. In one embodiment, afurther passivation layer (not shown) can be formed overlying conductivelayer 44. In one embodiment, all or a portion of shield electrodes 21can be connected to conductive layer 44 so that shield electrodes 21 areconfigured to be at the same potential as source regions 33 when device10 is in use. In another embodiment, shield electrodes 21 can beconfigured to be independently biased or coupled in part to gateelectrodes 28.

In one embodiment, the operation of device 10 can proceed as follows.Assume that source electrode (or input terminal) 44 and shieldelectrodes 21 are operating at a potential V_(S) of zero volts, gateelectrodes 28 would receive a control voltage V_(G) of 4.5 volts, whichis greater than the conduction threshold of device 10, and drainelectrode (or output terminal) 46 would operate at a drain potentialV_(D) of less than 2.0 volts. The values of V_(G) and V_(S) would causebody regions 31 to invert adjacent gate electrodes 28 to form channels45, which would electrically connect source regions 33 to semiconductorlayer 14. A device current I_(DS) would flow from drain electrode 46 andwould be routed through semiconductor layer 14, channels 45, and sourceregions 33 to source electrode 44. In one embodiment, I_(DS) is on theorder of 10.0 amperes. To switch device 10 to the off state, a controlvoltage V_(G) that is less than the conduction threshold of device 10would be applied to gate electrodes 28 (e.g., V_(G)<1.0 volts). Such acontrol voltage would remove channels 45 and I_(DS) would no longer flowthrough device 10. In accordance with the present embodiment, gatelayers 26 are formed before interpoly dielectric layers 127. The methodsubsequently used to form interpoly dielectric layers 127 reduces thegate layer thinning effect, which improves yields and deviceperformance. Also, by using a multi-portioned shield contact structure(for example, elements 141 and 142) and a flat portion (for example,element 1410), an improved shield electrode contact structure is formedfor providing electrical contact to shield electrodes 21, which improvesyields and performance.

The foregoing method and structure provides several advantages overrelated devices. For example, the method and structure can facilitate adie shrink to about 0.8 microns or less, which can improve performanceparameters, such as specific on-resistance. Also, the method andstructure facilitates higher yield and improved shield electrode contactintegrity compared to related devices.

From all of the foregoing, one skilled in the art can determine thataccording to one embodiment, a method for forming an electrode contactstructure comprises the steps of providing a region of semiconductormaterial (for example, element 11) having a major surface (for example,element 18). The method includes forming a contact trench (for example,element 27) extending from the major surface into the region ofsemiconductor material and forming a first dielectric layer (forexample, element 261, 262) along surfaces of the contact trench. Themethod includes forming a first electrode contact portion (for example,element 141) adjacent the first dielectric layer, wherein the firstelectrode contact portion is recessed below the first major surface. Themethod includes forming a second dielectric layer (for example, element127) overlying the first electrode contact portion. The method includesforming spacers (for example, element 68) along upper sidewall surfaces(for example, element 271) of the contact trench. The method includesforming an opening (for example, element 1270) in the second dielectriclayer aligned to the spacers. The method includes forming a secondelectrode contact portion (for example, element 142) within the contacttrench adjacent the spacers and contacting the first electrode contactportion within the contact trench.

Those skilled in the art will also appreciate that according to anotherembodiment, the method can further include the steps of forming a firstconductive layer within the contact trench, and removing portions of thefirst conductive layer while leaving another portion of the firstconductive layer (for example, element 141) within a lower portion ofthe contact trench, wherein the removing step forms the first electrodecontact portion with a horizontal portion (for example, element 1410),and wherein the step of forming the second electrode contact portionincludes forming the second contact portion so that the second contactportion makes contact to the first electrode contact portion along thehorizontal portion.

Those skilled in the art will also appreciate that according to anotherembodiment, the method can further include the steps of forming a thirddielectric layer (for example, element 26) along upper surfaces (forexample, element 271) of the contact trench and overlying the firstelectrode contact portion, and forming oxidation-resistant spacers (forexample, element 55) along the third dielectric layer, wherein the stepof forming the second dielectric layer comprises forming the seconddielectric layer using localized oxidation.

Those skilled in the art will also appreciate that according to anotherembodiment, the method can further include the steps of forming aninter-layer dielectric (for example, element 41) overlying the majorsurface, forming an opening (for example, element 422) in the interlayerdielectric aligned to the second electrode contact portion, and forminga conductive plug (for example, element 43) in the opening andcontacting the second electrode contact portion.

Those skilled in the art will also appreciate that according to stillanother embodiment a method for forming a semiconductor device comprisesthe steps of providing a region of semiconductor material (for example,element 11) having first and second opposing major surfaces (forexample, elements 18, 19). The method includes forming a contact trench(for example, element 27) extending from the first major surface intothe region of semiconductor material. The method includes forming afirst dielectric layer (for example, element 261, 262) along surfaces ofthe contact trench. The method includes forming a first shield electrodecontact portion (for example, element 141) adjacent the first dielectriclayer, wherein the first electrode contact portion is recessed below thefirst major surface and includes a flat portion (for example, element1410) parallel to the second major surface. The method includes forminga second dielectric layer (for example, element 127) overlying the firstelectrode contact portion. The method includes forming an opening (forexample, element 1270) in the second dielectric layer. The methodincludes forming a second shield electrode contact portion (for example,element 142) within the contact trench contacting the first electrodecontact portion within the contact trench and along the flat portion.

Those skilled in the art will also appreciate that according to anotherembodiment, the method can further include the steps of forming a thirddielectric layer (for example, element 26) along upper surfaces of thecontact trench and overlying the first electrode contact portion, andforming oxidation-resistant spacers (for example, element 55) along thethird dielectric layer, wherein the step of forming the seconddielectric layer comprises forming the second dielectric layer usinglocalized oxidation.

Those skilled in the art will also appreciate that according to anotherembodiment, the method can further include the steps of recessing thesecond electrode contact portion within the contact trench below thefirst major surface, forming a conductive region (for example, element89) in an upper portion of the second electrode contact portion, formingan inter-layer dielectric (for example, element 41) overlying the majorsurface, forming an opening (for example, element 422) in the interlayerdielectric aligned to the second electrode contact portion, and forminga conductive plug (for example, element 43) in the opening andcontacting the second electrode contact portion.

Those skilled in the art will also appreciate that according to yetanother embodiment, a method of forming a semiconductor device having ashield electrode comprises the steps of providing a region ofsemiconductor material (for example, element 11) having first and secondopposing major surfaces (for example, element 18, 19). The methodincludes forming a contact trench (for example, element 27) extendingfrom the first major surface into the region of semiconductor material.The method includes forming a first dielectric layer (for example,element 261, 262) along surfaces of the contact trench. The methodincludes forming a first shield electrode contact portion (for example,element 141) adjacent the first dielectric layer, wherein the firstelectrode contact portion is recessed below the first major surface andincludes a portion (for example, element 1410) parallel to the secondmajor surface. The method includes forming oxidation-resistant spacers(for example, element 55) along upper sidewall surfaces of the contacttrench. The method includes forming a second dielectric layer (forexample, element 127) overlying the first electrode contact portionusing localized oxidation. The method includes forming an opening (forexample, element 1270) in the second dielectric layer. The methodincludes forming a second shield electrode contact portion (for example,element 142) within the contact trench contacting the first electrodecontact portion within the contact trench and along the portion parallelto the second major surface.

Those skilled in the art will also appreciate that according to anotherembodiment, the method can further include the step of formingdielectric spacers (for example, element 68) along the upper sidewallsurfaces of the contact trench before the step of forming the opening inthe second dielectric layer, wherein the step of forming the openingincludes forming the opening self-aligned to the spacers, and whereinthe step of forming the second electrode contact portion includesforming the second electrode contact portion adjacent the dielectricspacers.

Those skilled in the art will also appreciate that according to anotherembodiment, the method can further include the step of forming a thirddielectric layer (for example, element 26) along the upper sidewallsurfaces of the contact trench before the step of forming theoxidation-resistant spacers.

Those skilled in the art will also appreciate that according to yet afurther embodiment, an electrode contact structure comprises a region ofsemiconductor material (for example, element 11) having first and secondopposing major surfaces (for example, elements 18, 19), wherein theregion of semiconductor material includes an active area (for example,102) and a contact area (for example, element 103). The structureincludes a contact trench (for example, element 27) extending from thefirst major surface into the region of semiconductor material. Thestructure includes a first dielectric layer (for example, element261,262) formed along surfaces of the contact trench, and a first shieldelectrode contact portion (for example, element 141) formed adjacent thefirst dielectric layer, wherein the first electrode contact portion isrecessed below the first major surface and includes a flat portion (forexample, element 1410) parallel to the second major surface. Thestructure includes a second dielectric layer (for example, element 127)formed overlying a part of the first electrode contact portion, and asecond shield electrode contact portion (for example, element 142)formed in the contact trench and contacting the first electrode contactportion along the flat portion.

Those skilled in the art will also appreciate that according to a stillfurther embodiment, a shield electrode contact structure comprises acontact trench (for example, element 27) formed in a region ofsemiconductor material (for example, element 11) having first and secondopposing major surfaces (for example, elements 18,19). The structureincludes a first conductive contact portion (for example, element 141)formed in a lower portion of the contact trench and having a recessedsurface (for example, element 1410) that is parallel to the second majorsurface, wherein the first conductive contact portion is insulated (forexample, element 259) from the region of semiconductor material, andwherein the first conductive contact portion is further coupled to atleast one shield electrode structure in an active portion of the regionof semiconductor material. The structure includes a second conductivecontact portion (for example, element 142) formed in the contact trenchand contacting the first conductive contact portion along the recessedsurface.

In view of all the above, it is evident that a novel method andstructure disclosed. Included, among other features, is a shieldelectrode contact structure formed in more than one portions, where afirst portion is formed recessed within a contact trench and formed witha flat portion. A second portion is formed overlying the first portionand makes contact to the first portion along the flat portion. Themethod improves yields and devices performance by reducing manufacturingproblems associated with related contact structures that use continuousconductive layers that curve upwards towards the major surface of thedevice.

While the subject matter of the invention is described with specificpreferred embodiments and example embodiments, the foregoing drawingsand descriptions thereof depict only typical embodiments of the subjectmatter, and are not therefore to be considered limiting of its scope. Itis evident that many alternatives and variations will be apparent tothose skilled in the art. For example, the subject matter has beendescribed for a particular n-channel MOSFET structure, although themethod and structure is directly applicable to other MOS transistors, aswells as bipolar, BiCMOS, metal semiconductor FETs (MESFETs), HFETs,thyristors bi-directional transistors, and other transistor structures.

As the claims hereinafter reflect, inventive aspects may lie in lessthan all features of a single foregoing disclosed embodiment. Thus, thehereinafter expressed claims are hereby expressly incorporated into thisDetailed Description of the Drawings, with each claim standing on itsown as a separate embodiment of the invention. Furthermore, while someembodiments described herein include some but not other featuresincluded in other embodiments, combinations of features of differentembodiments are meant to be within the scope of the invention, and formdifferent embodiments, as would be understood by those skilled in theart.

I claim: 1-16. (canceled)
 17. An electrode contact structure comprising:a region of semiconductor material having first and second opposingmajor surfaces, wherein the region of semiconductor material includes anactive area and a contact area; a contact trench extending from thefirst major surface into the region of semiconductor material; a firstdielectric layer along surfaces of the contact trench; a first shieldelectrode contact portion adjacent the first dielectric layer, whereinthe first electrode contact portion is recessed below the first majorsurface and includes a flat portion parallel to the second majorsurface; a second dielectric layer overlying a part of the firstelectrode contact portion; and a second shield electrode contact portionin the contact trench and contacting the first electrode contact portionalong the flat portion.
 18. The structure of claim 17, wherein the firstshield contact portion further forms at least one shield electrodewithin the active area.
 19. The structure of claim 17 further comprisinga conductive region formed in an upper portion of the second electrodecontact portion.
 20. The structure of claim 17, wherein the seconddielectric layer comprises a thermal oxide.
 21. An electrode contactstructure comprising: a region of semiconductor material having a majorsurface; a contact trench extending from the major surface into theregion of semiconductor material; a first dielectric region along lowersurfaces of the contact trench; a first electrode contact portionadjacent the first dielectric region, wherein the first electrodecontact portion is recessed below the major surface; a second dielectricregion along a part of an upper surface of the first electrode contactportion; a third dielectric region along upper surfaces of the contacttrench; and a second electrode contact portion within the contact trenchadjacent the third dielectric region and contacting the first electrodecontact portion within the contact trench.
 22. The structure of claim21, wherein: the first dielectric region is along the lower surfaces ofthe contact trench but not along the upper surfaces of the contacttrench; and the third dielectric region is along the upper surfaces ofthe contact trench but along the lower surfaces of the contract trench.23. The structure of claim 21 further comprising spacers between thethird dielectric region and the second electrode contact portion. 24.The structure of claim 21, wherein the second dielectric region extendsout of the contact trench and overlaps the major surface of the regionof semiconductor material.
 25. The structure of claim 21, wherein thesecond electrode contact portion contacts the first electrode contactportion along a surface that is substantially orthogonal to sidewallsurfaces of the contact trench.
 26. The structure of claim 21 furthercomprising a conductive region in an upper portion of the secondelectrode contact portion.
 27. The structure of claim 26, wherein theconductive region comprises a silicide region.
 28. The structure ofclaim 21 further comprising: an inter-layer dielectric overlying themajor surface having an opening substantially aligned to the secondelectrode contact portion; and a conductive plug in the opening andelectrically coupled to the second electrode contact portion.
 29. Anelectrode contact structure comprising: a contact trench in a region ofsemiconductor material having first and second opposing major surfaces;a first conductive contact portion in a lower portion of the contacttrench and having a recessed surface substantially parallel to thesecond major surface, wherein the first conductive contact portion isinsulated from the region of semiconductor material, and wherein thefirst conductive contact portion is further coupled to at least oneelectrode structure in an active portion of the region of semiconductormaterial; and a second conductive contact portion in the contact trenchand contacting the first conductive contact portion along the recessedsurface.
 30. The structure of claim 29 further comprising: a firstdielectric region between the first conductive contact portion and theregion of semiconductor material; and a second dielectric region betweenthe second conductive portion and the region of semiconductor material.31. The structure of claim 30 further comprising a third dielectricregion between the first dielectric region and the second dielectricregion.
 32. The structure of claim 30 further comprising spacers betweenthe second conductive portion and the second dielectric region.
 33. Thestructure of claim 30, wherein the second dielectric layer overlaps thefirst major surface.
 34. The structure of claim 30, wherein the firstdielectric region comprises a deposited oxide.
 35. The structure ofclaim 29 further comprising: an inter-layer dielectric overlying thefirst major surface having an opening substantially aligned to thesecond conductive contact portion; and a conductive plug in the openingand electrically coupled to the second conductive contact portion. 36.The structure of claim 29, wherein the electrode contact structurecomprises a shield electrode contact structure.